Runwei Li, deputy director of Ningbo Institute of Materials Technology and Engineering, director of Key Laboratory of Magnetic Materials and Devices, CAS. His awards and honors include “One hundred Outstanding Young Chinese Scientists","151 talents program in the new century of Zhejiang Province"(2008), "Thousand Talents program of Zhejiang Province", "Outstanding Youth Science and Technology Innovation Talents of Shanghai Branch"(2010), "AUMS Young Researcher AWARD", "Natural and Science Academic Award of Zhejiang Province (first prize)"(2012), "Science and Technology Award for Youth of Zhejiang Province"(2013), "National youth science and technology innovation talents"(2014), "Outstanding Young Investigator Award"(2015). He is the referee for over 30 international journals such as Nat. Commun., Adv. Mater., Chem. Mater., Appl. Phys. Lett., Nanoscale, New J. Phys., Nanotechnology, Electro. Device Lett., J. Appl. Phys. His research interests are functional materials and devices for the new type storage and sensors, including multiferroic materials, resistive random access memory (RRAM) materials, and related physics and devices.